Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation

Abstract

Single-event transient (SET) data for the 14-/16-nm bulk finFET technology generation are presented and analyzed for variations in threshold voltage and number of fins in the transistor. The heavy-ion experimental data over a range of supply voltage allows for a comparison of the impact of drive current on the SET response of each transistor variant. The results show that the transistor drive current is a key factor for determining SET pulsewidths and cross sections for high linear energy transfer particle irradiation. Transistor variant data that result in matching transistor drive current show an excellent match for SET pulsewidths and cross sections.