R. C. Harrington

Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

Patrick Nsengiyumva, L. W. Massengill, J. S. Kauppila et al. · IEEE Transactions on Nuclear Science · 2017 · 31 citations

Device Modeling, Electrical Engineering, Angular Effects +13

The Impact of Charge Collection Volume and Parasitic Capacitance on SEUs in SOI- and Bulk-FinFET D Flip-Flops

Dennis R. Ball, Michael L. Alles, J. S. Kauppila et al. · IEEE Transactions on Nuclear Science · 2017 · 23 citations

Engineering, Vlsi Design, Integrated Circuits +18

Effect of Transistor Variants on Single-Event Transients at the 14-/16-nm Bulk FinFET Technology Generation

R. C. Harrington, J. A. Maharrey, J. S. Kauppila et al. · IEEE Transactions on Nuclear Science · 2018 · 23 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13

Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques

J. A. Maharrey, J. S. Kauppila, R. C. Harrington et al. · IEEE Transactions on Nuclear Science · 2017 · 21 citations

Set Duration, Engineering, Vlsi Design +17

Exploiting Parallelism and Heterogeneity in a Radiation Effects Test Vehicle for Efficient Single-Event Characterization of Nanoscale Circuits

J. S. Kauppila, J. A. Maharrey, R. C. Harrington et al. · IEEE Transactions on Nuclear Science · 2017 · 16 citations

Engineering, Vlsi Design, Computer Architecture +23