Angular Effects on Single-Event Mechanisms in Bulk FinFET Technologies

Abstract

Angular single-event (SE) mechanisms and experimental upset data for 14-/16-nm bulk fin field-effect transistor (FinFET) technologies are presented and analyzed. The discrete structure of FinFETs introduces unique geometrical and orientation dependences for angular SE mechanisms and SE upset (SEU) responses of FinFET circuits. Geometric analyses and 3-D technology computer-aided design results effectively explain the angular mechanisms behind experimentally observed SE cross-sectional responses. Results show that angular SEU cross-sectional characteristics can be attributed to the proportional contributions of charge deposition regions in the fin structure and the subfin bulk substrate.