Control the switching mode of Pt/HfO2/TiN RRAM devices by tuning the crystalline state of TiN electrode

Reproducible resistance switching in polycrystalline NiO films

Sunae Seo, Myoung‐Jae Lee, David H. Seo et al. · Applied Physics Letters · 2004 · 934 citations

Natural Sciences, Materials Engineering, Materials Science +16

High speed resistive switching in Pt∕TiO2∕TiN film for nonvolatile memory application

Chikako Yoshida, K. Tsunoda, Hideyuki Noshiro et al. · Applied Physics Letters · 2007 · 268 citations

Engineering, Materials Engineering, Materials Science +17

Three‐Dimensional Integration of Organic Resistive Memory Devices

Sunghoon Song, Byungjin Cho, Tae‐Wook Kim et al. · Advanced Materials · 2010 · 234 citations

Natural Sciences, Materials Engineering, Materials Science +15

BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES

W. R. Hiatt, T. W. Hickmott · Applied Physics Letters · 1965 · 231 citations

Engineering, Electrical Engineering, Materials Science +8

Ti O 2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching

Masayuki Fujimoto, Hiroshi Koyama, Masashi Konagai et al. · Applied Physics Letters · 2006 · 220 citations

Natural Sciences, Materials Engineering, Materials Science +17