Applied Physics Letters · 1965 · 231 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceCondensed Matter PhysicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyOxide SemiconductorsBistable MaterialsBistable MechanismsSwitching Behavior
Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation W. R. Hiatt, T. W. Hickmott; BISTABLE SWITCHING IN NIOBIUM OXIDE DIODES. Appl. Phys. Lett. 15 March 1965; 6 (6): 106–108. https://doi.org/10.1063/1.1754187 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search
5
Avalanche-Induced Negative Resistance in Thin Oxide Films
K. L. Chopra · Journal of Applied Physics · 1965 · 159 citations
A new negative-resistance device
D. V. Geppert · Proceedings of the IEEE · 1963 · 50 citations
Natural Sciences, Electrical Engineering, Materials Science +6