Three‐Dimensional Integration of Organic Resistive Memory Devices

Abstract

Organic memory: Our three-dimensionally (3D) stacked 8 × 8 cross-bar array organic resistive memory devices showed non-volatile memory switching behavior, in which individual memory cells in the different layers can be independently controlled and monitored. The 3D stackable organic memory devices will enable achieving highly integrable organic memory devices and other organic-based electronics with much increased cell density. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.