Hyunsang Hwang

Excellent Selector Characteristics of Nanoscale $ \hbox{VO}_{2}$ for High-Density Bipolar ReRAM Applications

Myungwoo Son, Joonmyoung Lee, Jubong Park et al. · IEEE Electron Device Letters · 2011 · 296 citations

Materials Science, Materials Engineering, Electrical Engineering +9

Three‐Dimensional Integration of Organic Resistive Memory Devices

Sunghoon Song, Byungjin Cho, Tae‐Wook Kim et al. · Advanced Materials · 2010 · 233 citations

Reproducible hysteresis and resistive switching in metal-CuxO-metal heterostructures

Rui Dong, D. S. Lee, Wang Xiang et al. · Applied Physics Letters · 2007 · 188 citations

Materials Science, Semiconductors, Materials Engineering +12

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications

Joonmyoung Lee, El Mostafa Bourim, Wootae Lee et al. · Applied Physics Letters · 2010 · 149 citations · Full text

Materials Science, Zrox/hfox Bilayer Structure, Electrical Engineering +15

HPHA Effect on Reversible Resistive Switching of Pt∕Nb-Doped SrTiO[sub 3] Schottky Junction for Nonvolatile Memory Application

Dong-jun Seong, Minseok Jo, Dongsoo Lee et al. · Electrochemical and Solid-State Letters · 2007 · 109 citations

Non-volatile Memory, Electrical Engineering, Reversible Resistive Switching +12