Dong-jun Seong - Concepedia

Author

Dong-jun Seong

Gwangju Institute of Science and Technology

Also Known As

Dong-Jun Seong, Dong-jun Seong, Dongjun Seong

Publications

Citations

H-Index

Concepts

All Affiliations

Gwangju Institute of Science and Technology

About

Dong-jun Seong is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	18	996
2	Applied Physics	16	18	996
3	Chemical Engineering	1	1	33
4	Chemistry	1	1	63
5	Computer Engineering	1	1	146

Dong-jun Seong

Publications

996

Citations

H-Index

Page 1

	Year	Citations
Resistance switching of copper doped MoOx films for nonvolatile memory applications Dongsoo Lee, Dong-jun Seong, Inhwa Jo, Applied Physics Letters Materials ScienceNon-volatile MemoryElectrical EngineeringMoox FilmEngineering	2007	147
An electrically modifiable synapse array of resistive switching memory Hyejung Choi, Heesoo Jung, Joonmyoung Lee, Nanotechnology Electrical EngineeringEngineeringNanotechnologyNanoelectronicsBioelectronics	2009	146
HPHA Effect on Reversible Resistive Switching of Pt∕Nb-Doped SrTiO[sub 3] Schottky Junction for Nonvolatile Memory Application Dong-jun Seong, Minseok Jo, Dongsoo Lee, Electrochemical and Solid-State Letters Non-volatile MemoryElectrical EngineeringReversible Resistive SwitchingEngineeringSemiconductor Device	2007	109
Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications Jaesik Yoon, Hyejung Choi, Dongsoo Lee, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringSemiconductorsEngineering	2009	91
A non-linear ReRAM cell with sub-1&#x03BC;A ultralow operating current for high density vertical resistive memory (VRRAM) Seong-Geon Park, Min Kyu Yang, Hyunsu Ju, Non-volatile MemoryElectrical EngineeringEngineeringSub-1μa Ultralow OperatingA Ultralow Operating	2012	75
Resistive-Switching Characteristics of $\hbox{Al}/ \hbox{Pr}_{0.7}\hbox{Ca}_{0.3}\hbox{MnO}_{3}$ for Nonvolatile Memory Applications Dong-jun Seong, Mostafa Afifi Hassan, Hyejung Choi, IEEE Electron Device Letters EngineeringEmerging Memory TechnologyThin Film Process TechnologyChemical DepositionConventional Sputtering Method	2009	66
Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications Dongsoo Lee, Dong-jun Seong, Hye Jung Choi, Non-volatile MemoryEngineeringReproducible ResistanceEmerging Memory TechnologySolid-state Chemistry	2006	63
Investigation of State Stability of Low-Resistance State in Resistive Memory Jubong Park, Minseok Jo, El Mostafa Bourim, IEEE Electron Device Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringExternal Load Resistor	2010	59
Nanoscale Resistive Switching of a Copper–Carbon-Mixed Layer for Nonvolatile Memory Applications Hyejung Choi, Myeongbum Pyun, Tae‐Wook Kim, IEEE Electron Device Letters Materials ScienceNon-volatile MemoryElectrical EngineeringEngineeringNanotechnology	2009	34
Improvement of Characteristics of Ga-Doped ZnO Grown by Pulsed Laser Deposition Using Plasma-Enhanced Oxygen Radicals Min‐Suk Oh, Dae‐Kue Hwang, Dong-jun Seong, Journal of The Electrochemical Society Materials ScienceChemical EngineeringEngineeringOxide ElectronicsApplied Physics	2008	33

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