Concepedia

Seong-Geon Park

SP

Statistics

Publications

7

Citations

396

H-Index

7

Active since

2008

Affiliations

Stanford University(Current)

Samsung (South Korea)

Seong-Geon Park is an author at Stanford University specializing in electronic materials, materials science, and memristive materials.

Publications per year

2008–2022

7

Publications

7

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi · IEEE Electron Device Letters · 2010 · 130 citations

, , +17

A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

Seong-Geon Park, Min Kyu Yang, Hyunsu Ju et al. · 2012 · 75 citations

, , +15

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO<sub>2</sub>, NiO and Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub>

Blanka Magyari-Köpe, Mihir Tendulkar, Seong-Geon Park et al. · Nanotechnology · 2011 · 75 citations

, , +17

Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

Liang Zhao, Seong-Geon Park, Blanka Magyari-Köpe et al. · Applied Physics Letters · 2013 · 59 citations · Full text

, , +17

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices

Liang Zhao, Seong-Geon Park, Blanka Magyari-Köpe et al. · Mathematical and Computer Modelling · 2012 · 28 citations

, , +17

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