Seong-Geon Park

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

Seong-Geon Park, Blanka Magyari-Köpe, Yoshio Nishi · IEEE Electron Device Letters · 2010 · 130 citations

Engineering, Emerging Memory Technology, Electronic Properties +19

A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

Seong-Geon Park, Min Kyu Yang, Hyunsu Ju et al. · 2012 · 75 citations

Non-volatile Memory, Electrical Engineering, Engineering +13

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO₂, NiO and Pr_0.7Ca_0.3MnO₃

Blanka Magyari-Köpe, Mihir Tendulkar, Seong-Geon Park et al. · Nanotechnology · 2011 · 74 citations

Non-volatile Memory, Point Defects, Engineering +16

Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

Liang Zhao, Seong-Geon Park, Blanka Magyari-Köpe et al. · Applied Physics Letters · 2013 · 59 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +13

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices

Liang Zhao, Seong-Geon Park, Blanka Magyari-Köpe et al. · Mathematical and Computer Modelling · 2012 · 28 citations

Materials Science, Oxygen Vacancy Filaments, Non-volatile Memory +8