Analysis and Modeling of Thermal-Electric Coupling Effect of High-Power Monolithically Integrated Light-Emitting Diode

Abstract

A 2-D thermal-electric coupling model has been developed, which enables us to evaluate the current distribution of monolithically integrated light-emitting diode (MI-LED). Based on the experimental IR images, the current distributions have been evaluated for the MI-LEDs on two types' heat sinks. For the MI-LED on poor thermal conductive chip-on-board heat sink, although there is a large junction temperature variation of 40 °C all over the chip, the current only varies from -16% to 11% due to the high parasitic series resistance and the topological design of MI-LED. The experiments show that the impact of the heat-crowding-induced uneven current distribution on the wall-plug efficiency is negligible at a power density of 1 W/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The average junction temperature is still the dominant issue. With a high thermal conductive copper heat sink, the average junction temperature could be suppressed below 50 °C, and there is no obvious heat crowding and uneven current distribution observed.