Concepedia

Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

Humberto M. Foronda, Feng Wu, Christian J. Zollner, Muhammad Esmed Alif, Burhan K. SaifAddin, Abdullah Almogbel, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Journal of Crystal Growth · 2017 · 22 citations · 17 references

DOI

Concepts

References

17

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

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Advances in group III-nitride-based deep UV light-emitting diode technology

Michael Kneissl, Tim Kolbe, C.L. Chua et al. · Semiconductor Science and Technology · 2010 · 673 citations

, , +4

Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

Yoshihiko Muramoto, Masahiro Kimura, Suguru Nouda · Semiconductor Science and Technology · 2014 · 427 citations · Full text

, , +13

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Applied Physics Letters · 2007 · 345 citations

, , +13

Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers

S. R. Lee, A. M. West, Andrew A. Allerman et al. · Applied Physics Letters · 2005 · 291 citations

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