Tohru Yatabe

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Applied Physics Letters · 2007 · 343 citations

Aluminium Nitride, Electrical Engineering, Solid-state Lighting +10

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

Hideki Hirayama, Norimichi Noguchi, Tohru Yatabe et al. · Applied Physics Express · 2008 · 114 citations

Aluminium Nitride, Electrical Engineering, Aln Buffer +15

Development of 230–270 nm AlGaN‐based deep‐UV LEDs

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Electronics and Communications in Japan · 2010 · 43 citations

Materials Science, Electrical Engineering, Solid-state Lighting +12

Remarkable enhancement of 254‐280 nm deep ultraviolet emission from AlGaN quantum wells by using high‐quality AlN buffer on sapphire

Hideki Hirayama, Tohru Yatabe, Tomoaki Ohashi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 33 citations

Materials Science, Aluminium Nitride, Optical Materials +12

226–273 nm AlGaN deep‐ultraviolet light‐emitting diodes fabricated on multilayer AlN buffers on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 25 citations

Aluminium Nitride, Optical Materials, Engineering +16