Norimichi Noguchi

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Takayoshi Takano, Takuya Mino, Jun Sakai et al. · Applied Physics Express · 2017 · 544 citations

Engineering, Optical Properties, Nanoelectronics +16

222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire

Hideki Hirayama, Sachie Fujikawa, Norimichi Noguchi et al. · physica status solidi (a) · 2009 · 419 citations

Aluminium Nitride, Engineering, Optoelectronic Devices +18

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Applied Physics Letters · 2007 · 343 citations

Aluminium Nitride, Electrical Engineering, Solid-state Lighting +10

227 nm AlGaN Light-Emitting Diode with 0.15 mW Output Power Realized using a Thin Quantum Well and AlN Buffer with Reduced Threading Dislocation Density

Hideki Hirayama, Norimichi Noguchi, Tohru Yatabe et al. · Applied Physics Express · 2008 · 114 citations

Aluminium Nitride, Electrical Engineering, Aln Buffer +15

222 nm Deep-Ultraviolet AlGaN Quantum Well Light-Emitting Diode with Vertical Emission Properties

Hideki Hirayama, Norimichi Noguchi, Norihiko Kamata · Applied Physics Express · 2010 · 87 citations

Photonics, Electrical Engineering, Solid-state Lighting +13