Takuya Mino

Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency

Takayoshi Takano, Takuya Mino, Jun Sakai et al. · Applied Physics Express · 2017 · 560 citations

Engineering, Electrical Engineering, Materials Science +15

Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

Takuya Mino, Hideki Hirayama, Takayoshi Takano et al. · Applied Physics Express · 2011 · 34 citations

Engineering, Electrical Engineering, Materials Science +17

Characteristics of epitaxial lateral overgrowth AlN templates on (111)Si substrates for AlGaN deep‐UV LEDs fabricated on different direction stripe patterns

Takuya Mino, Hideki Hirayama, Takayoshi Takano et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2012 · 18 citations

Engineering, Materials Engineering, Materials Science +17

Highly‐uniform 260 nm‐band AlGaN‐based deep‐ultraviolet light‐emitting diodes developed by 2‐inch×3 MOVPE system

Takuya Mino, Hideki Hirayama, Takayoshi Takano et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2011 · 18 citations

Engineering, Materials Engineering, Materials Science +17