Tomoaki Ohashi

231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Applied Physics Letters · 2007 · 343 citations

Aluminium Nitride, Electrical Engineering, Solid-state Lighting +10

Remarkable enhancement of 254‐280 nm deep ultraviolet emission from AlGaN quantum wells by using high‐quality AlN buffer on sapphire

Hideki Hirayama, Tohru Yatabe, Tomoaki Ohashi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 33 citations

Materials Science, Aluminium Nitride, Optical Materials +12

226–273 nm AlGaN deep‐ultraviolet light‐emitting diodes fabricated on multilayer AlN buffers on sapphire

Hideki Hirayama, Tohru Yatabe, Norimichi Noguchi et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 25 citations

Aluminium Nitride, Optical Materials, Engineering +16

Fluidic Patch Device to Sample Sweat for Accurate Measurement of Sweat Rate and Chemical Composition: A Proof-of-Concept Study

Tomoaki Ohashi, Nicola Gerrett, Satoru Shinkawa et al. · Analytical Chemistry · 2020 · 20 citations