Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO₂gate insulators by controlling atomic-layer-deposition conditions

Abstract

Improvement in negative bias illumination stress stability of In–Ga–Zn–O thin film transistors using HfO2 gate insulators by controlling atomic-layer-deposition conditions, Na, So-Yeong, Kim, Yeo-Myeong, Yoon, Da-Jeong, Yoon, Sung-Min