2004 · 20 citations · 3 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignAnalog Integrated CircuitsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignLow-noise Circuit DesignMixed-signal Integrated Circuit DesignCmos Analog Circuit DesignCmos Analog Integrated CircuitsCmos Fabrication ProcessesComplementary Metal-oxide-semiconductor DesignHigh-speed Cmos DesignOxidation
This paper demonstrated CMOS characteristics on a Si(110) surface by using a surface flattening process and radical oxidation. By forming a MOS device on a Si(110) surface, a high-speed and low 1/f noise p-MOSFET can be realized. Furthermore, balanced current drivability of p-MOS and n-MOS in the CMOS (balanced CMOS) on Si(110) surface can be also realized. This is very useful for analog/digital mixed signal circuits.
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(110)-surface strained-SOI CMOS devices with higher carrier mobility
Tomohisa Mizuno, Naoharu Sugiyama, Tetsuo Tezuka et al. · 2004 · 25 citations