Y. Takeishi

Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces

Tai Satô, Y. Takeishi, Hisashi Hara et al. · Physical review. B, Solid state · 1971 · 279 citations

Engineering, Silicon On Insulator, Charge Transport +18

Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces

Tai Satô, Y. Takeishi, Hisashi Hara · Japanese Journal of Applied Physics · 1969 · 121 citations

Engineering, Silicon On Insulator, Strong Electric Field +18

Energy Broadening in the Auger-Type Neutralization of Slow Ions at Solid Surfaces

H. D. Hagstrum, Y. Takeishi, Donavon Pretzer · Physical Review · 1965 · 86 citations

Engineering, Ion Process, Semiconductors +16

Diffraction of low-energy electrons at crystal surfaces

Kanji Hirabayashi, Y. Takeishi · Surface Science · 1966 · 49 citations

Engineering, Physics, Applied Physics +5

Drift-Velocity Saturation of Holes in Si Inversion Layers

Tai Satô, Y. Takeishi, H. Tango et al. · Journal of the Physical Society of Japan · 1971 · 38 citations

Drift-velocity Saturation, Physics, Applied Physics +3