Tai Satô

Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon Surfaces

Tai Satô, Y. Takeishi, Hisashi Hara et al. · Physical review. B, Solid state · 1971 · 279 citations

Engineering, Silicon On Insulator, Charge Transport +18

Effects of Crystallographic Orientation on Mobility, Surface State Density, and Noise in p-Type Inversion Layers on Oxidized Silicon Surfaces

Tai Satô, Y. Takeishi, Hisashi Hara · Japanese Journal of Applied Physics · 1969 · 121 citations

Engineering, Silicon On Insulator, Strong Electric Field +18

Electrically alterable avalanche-injection-type MOS READ-ONLY memory with stacked-gate structure

H. Iizuka, F. Masuoka, Tai Satô et al. · IEEE Transactions on Electron Devices · 1976 · 67 citations

Non-volatile Memory, Electrical Engineering, Engineering +15

Drift-Velocity Saturation of Holes in Si Inversion Layers

Tai Satô, Y. Takeishi, H. Tango et al. · Journal of the Physical Society of Japan · 1971 · 38 citations

Drift-velocity Saturation, Physics, Applied Physics +3

A high speed and low power CMOS/SOS multiplier-accumulator

Jun Iwamura, S. Taguchi, Suganuma Kazuo et al. · Microelectronics Journal · 1983 · 27 citations