2003 · 26 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsOptoelectronicsSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesRadio-frequency Integrated CircuitsBicmos TechnologyCmos Fabrication ProcessesCmos Radio-frequency CircuitsComplementary Metal-oxide-semiconductor DevicesMillimeter-wave Integrated CircuitsOptical NetworkingSige Bicmos DesignWireless Networking
This paper describes a manufacturable 0.13/spl mu/m SiGe:C BiCMOS technology for optical networking and wireless applications, with npn f/sub T//f/sub max/ of 166/175GHz and 1.8V BV/sub CEO/, dual V/sub T/ and dual gate oxide CMOS devices, high quality passives and a 6-level copper back-end.
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SiGe HBTs with cut-off frequency of 350 GHz
Jae-Sung Rieh, B. Jagannathan, H. Chen et al. · 2003 · 201 citations
Sub 5 ps SiGe bipolar technology
J. Böck, H. Schäfer, H. Knapp et al. · 2003 · 48 citations
High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy
H. Baudry, B. Martinet, C. Fellous et al. · 2002 · 41 citations