Scalability of SOI technology into 0.13 μm 1.2 V CMOS generation

Abstract

The scalability of SOI CMOS technology into the low voltage high performance regime and its comparison with bulk CMOS technology is presented. Based on ring oscillator performance, the 0.13 /spl mu/m SOI CMOS technology can achieve more than 25% faster speed and/or 50% less active power compared to a similar bulk technology.