2002 · 21 citations · 4 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsBreakdown VoltageInversion Layer FormationIon Implantation EffectsShallow Junction FormationThreshold VoltageThreshold Voltage ControlThreshold Voltage Roll-offUltra-shallow Junction Engineering
MOSFETs containing sub-gates as sidewall spacers of the main gate are fabricated. The inversion layers induced in these MOSFETs by the sub-gates are used as source and drain, in order to investigate how the extremely shallow junction affects the short channel characteristics of MOSFETs. Significant improvement in the short channel characteristics is observed in comparison with conventional MOSFETs whose junctions are formed by ion implantation. These new MOSFETs do not show threshold voltage roll-off at the defined gate length around 0.1 /spl mu/m, and punchthrough is not observed down to 0.07 /spl mu/m.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A new method to determine MOSFET channel length
Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations
A High Performance 0.25/spl mu/m CMOS
Shahidi, Warnock, Acovic et al. · Symposium on VLSI Technology · 1993 · 36 citations