Neil F. Albert

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Publications

Citations

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Active since

1988

Affiliations

IBM Research - Thomas J. Watson Research Center(Current)

Neil F. Albert is an author at IBM Research - Thomas J. Watson Research Center specializing in nanoelectronics, microelectronics, and applied physics.

Top concepts

EngineeringApplied PhysicsNanoelectronicsMicroelectronicsElectrical EngineeringPhysicsDevice ModelingSurface ScienceElectronic Engineering

Publications per year

1988–1990

Publications

Determination of the inversion-layer thickness from capacitance measurements of metal-oxide-semiconductor field-effect transistors with ultrathin oxide layers

A. Hartstein, Neil F. Albert · Physical review. B, Condensed matter · 1988 · 46 citations

Device Modeling, Electrical Engineering, Elevated Temperatures Excitation +15

A metal-oxide-semiconductor field-effect transistor with a 20-nm channel length

A. Hartstein, Neil F. Albert, A. A. Bright et al. · Journal of Applied Physics · 1990 · 18 citations

Electrical Engineering, Sio2 Gate Oxide, Engineering +10

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