Publication | Closed Access
Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
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Citations
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References
1998
Year
Materials ScienceEngineeringPhysicsApplied PhysicsCondensed Matter PhysicsQuantum MaterialsSuper-flat InterfacesIn0.53ga0.47as/in0.52al0.48as Quantum WellsMolecular Beam EpitaxyEpitaxial GrowthSemiconductor Nanostructures
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