Akio Wakejima

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

S. Lawrence Selvaraj, Arata Watanabe, Akio Wakejima et al. · IEEE Electron Device Letters · 2012 · 99 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy

S. Shimomura, Akio Wakejima, Akira Adachi et al. · Japanese Journal of Applied Physics · 1993 · 97 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy

S. Hiyamizu, S. Shimomura, Akio Wakejima et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1994 · 55 citations

Electrical Engineering, Photoluminescence, Engineering +10

A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics

Akio Wakejima, K. Ota, K. Matsunaga et al. · IEEE Transactions on Electron Devices · 2003 · 45 citations

Wcdma Peak-power Degradation, Electrical Engineering, Field-modulating Plate +10

100 W C-band single-chip GaN FET power amplifier

Yasuhiro Okamoto, Akio Wakejima, Yuji Ando et al. · Electronics Letters · 2006 · 38 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9