Arata Watanabe

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

S. Lawrence Selvaraj, Arata Watanabe, Akio Wakejima et al. · IEEE Electron Device Letters · 2012 · 99 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate

S. Lawrence Selvaraj, Arata Watanabe, Takashi Egawa · Applied Physics Letters · 2011 · 30 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Normally off AlGaN/GaN HEMT on Si substrate with selectively dry-etched recessed gate and polarization-charge-compensation δ-doped GaN cap layer

Akio Wakejima, Akihiro Ando, Arata Watanabe et al. · Applied Physics Express · 2015 · 28 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +13

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Dennis Christy, Arata Watanabe, Takashi Egawa · AIP Advances · 2014 · 25 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Modeling of the wafer bow in GaN-on-Si epiwafers employing GaN/AlN multilayer buffer structures

Makoto Miyoshi, Arata Watanabe, Takashi Egawa · Semiconductor Science and Technology · 2016 · 24 citations

Materials Science, Gan-on-si Epiwafers, Electrical Engineering +13