S. Lawrence Selvaraj

1.4-kV Breakdown Voltage for AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrate

S. Lawrence Selvaraj, Arata Watanabe, Akio Wakejima et al. · IEEE Electron Device Letters · 2012 · 99 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Effect of GaN Buffer Layer Growth Pressure on the Device Characteristics of AlGaN/GaN High-Electron-Mobility Transistors on Si

Josephine Selvaraj, S. Lawrence Selvaraj, Takashi Egawa · Japanese Journal of Applied Physics · 2009 · 45 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +10

Design and Characterization of Micro-LED Matrix Display With Heterogeneous Integration of GaN and BCD Technologies

Mei Yu Soh, Wen Xian Ng, Tee Hui Teo et al. · IEEE Transactions on Electron Devices · 2019 · 35 citations

μLed Matrix Display, Engineering, Optoelectronic Devices +17

Influence of Ammonia in the Deposition Process of SiN on the Performance of SiN/AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors on 4-in. Si(111)

S. Arulkumaran, Liu Hong, Geok Ing Ng et al. · Applied Physics Express · 2009 · 32 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +12

Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕GaN high-electron-mobility transistors on 4in. silicon

S. Lawrence Selvaraj, Takashi Egawa · Applied Physics Letters · 2006 · 29 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +14