Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy - Concepedia

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Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

18

Citations

7

References

1995

Year

S. Shimomura, Shinjiroh Kaneko, Takeharu Motokawa, Keisuke Shinohara, Akira Adachi, Yasunori Okamoto, Naokatsu Sano, Kazuo Murase, S. Hiyamizu

Journal of Crystal Growth

Materials ScienceHigh Al ContentEngineeringPhysicsFlat InterfacesApplied PhysicsMolecular Beam EpitaxyCompound SemiconductorGaas/algaas Quantum Wells

References

	Year	Citations

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