Chemically assisted ion beam etching of laser diode facets on nonpolar and semipolar orientations of GaN

Abstract

This work was supported by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was completed in the UCSB nanofabrication facility, part of the NSF National Nanotechnology Infrastructure Network (NNIN) (ECS-0335765), as well as the UCSB Materials Research Laboratory (MRL) facilities, which are supported under the NSF MRSEC program (DMR-1121053). The authors thank B Lingg for his assistance with the CAIBE tool maintenance, L Megalini and C Forman for informative experiments, and R Farrell, T Margalith, J Speck and C Weisbuch for their useful comments.