Daniel L. Becerra

High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design

Daniel L. Becerra, Yuji Zhao, Sang Ho Oh et al. · Applied Physics Letters · 2014 · 55 citations

Engineering, Electrical Engineering, Materials Science +17

Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

Changmin Lee, Chong Zhang, Daniel L. Becerra et al. · Applied Physics Letters · 2016 · 43 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating

Haojun Zhang, Daniel A. Cohen, Philip Chan et al. · Optics Letters · 2019 · 32 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers

Shlomo Mehari, Daniel A. Cohen, Daniel L. Becerra et al. · Optics Express · 2018 · 30 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (202¯1¯) III-nitride laser diodes with chemically assisted ion beam etched facets

Daniel L. Becerra, Leah Y. Kuritzky, Joseph Nedy et al. · Applied Physics Letters · 2016 · 28 citations

Engineering, Electrical Engineering, Materials Science +17