Solid-State Electronics · 2016 · 16 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationSemiconductor ReliabilityWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown MechanismsBreakdown VoltageBreakdown Voltage OptimizationBreakdown Voltage TestingHigh-voltage BreakdownJunction BreakdownSaturation Current
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Ionization rates and critical fields in 4H silicon carbide
Andrey O. Konstantinov, Q. Wahab, N. Nordell et al. · Applied Physics Letters · 1997 · 398 citations