Concepedia

76‐3: Development of a Top‐Gate Transistor with Short Channel Length and C‐Axis‐Aligned Crystalline Indium‐Gallium‐Zinc‐Oxide for High‐Resolution Panels

Yukinori Shima, Masami Jincho, Takashi Hamochi, Satoru Saito, Masayoshi Dobashi, Ken‐ichi Okazaki, Junichi Koezuka, Shinpei Matsuda, Masashi Tsubuku, Shunpei Yamazaki

SID Symposium Digest of Technical Papers · 2016 · 12 citations · 8 references

DOI

Concepts

Abstract

We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.

References

8

8.3: <i>Invited Paper</i> : Advantages of IGZO Oxide Semiconductor

Takuya Matsuo, Shigeyasu Mori, Atsushi Ban et al. · SID Symposium Digest of Technical Papers · 2014 · 80 citations

, , +17

Characterization of reactively sputtered c-axis aligned nanocrystalline InGaZnO4

David M. Lynch, Bin Zhu, Barnaby D.A. Levin et al. · Applied Physics Letters · 2014 · 47 citations

, , +14

High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor

Chen-Yang Chung, Bin Zhu, Raymond G. Greene et al. · Applied Physics Letters · 2015 · 44 citations

, , +17

52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide

Junichi Koezuka, Ken‐ichi Okazaki, Takuya Hirohashi et al. · SID Symposium Digest of Technical Papers · 2013 · 35 citations

, , +9

21.4: Deposition Conditions and HRTEM Characterization of CAAC IGZO

David M. Lynch, Bin Zhu, Barnaby D.A. Levin et al. · SID Symposium Digest of Technical Papers · 2015 · 25 citations

, , +16