52.3: Development of Back‐channel‐etched TFT Using C‐Axis Aligned Crystalline In‐Ga‐Zn‐Oxide

Abstract

Abstract We have fabricated a back‐channel‐etched TFT using the CAAC‐IGZO film that we developed. As a factor of success in manufacturing stable back‐channel‐etched TFTs, it is considered that CAAC‐IGZO has a strong structure because of its crystallinity. For verification, we have compared the cohesive energy of c‐IGZO and that of a‐IGZO.