Pressure-Controlled GaN MBE Growth Using a Hollow Anode Nitrogen Ion Source

Mg-doped <i>p</i>-type GaN grown by reactive molecular beam epitaxy

Wook Kim, A. Salvador, A. Botchkarev et al. · Applied Physics Letters · 1996 · 110 citations

Materials Engineering, Materials Science, Electrical Engineering +8

The working principle of the hollow-anode plasma source

André Anders, S. Anders · Plasma Sources Science and Technology · 1995 · 75 citations

Electron Density, Electrical Engineering, Engineering +11

Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates

M. Asif Khan, C. J. Sun, Jinwei Yang et al. · Applied Physics Letters · 1996 · 35 citations

Optical Materials, Engineering, Laser Science +21

Growth and properties of In<i>x</i>Ga1−<i>x</i>N/Al<i>y</i>Ga1−<i>y</i>N multiquantum wells developed by molecular beam epitaxy

R. Singh, D. Doppalapudi, T. D. Moustakas · Applied Physics Letters · 1996 · 28 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +13