Back Channel Degradation and Device Material Improvement by Ge Implantation

A systematic analysis of defects in ion-implanted silicon

K. S. Jones, S.G. Prussin, E. R. Weber · Applied Physics A · 1988 · 506 citations

Engineering, Materials Science, Electronic Materials +13

High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealing

G. K. Celler, P.L.F. Hemment, K. W. West et al. · Applied Physics Letters · 1986 · 156 citations

Engineering, Materials Engineering, Materials Science +17

Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques

S.S. Lau, S. Matteson, J. W. Mayer et al. · Applied Physics Letters · 1979 · 115 citations

Engineering, Materials Engineering, Materials Science +17

The reduction of dislocations in oxygen implanted silicon-on-insulator layers by sequential implantation and annealing

D. E. Hill, P. Fraundorf, G. K. Fraundorf · Journal of Applied Physics · 1988 · 75 citations

Engineering, Materials Engineering, Materials Science +17

Microstructure of high-temperature annealed buried oxide silicon-on-insulator

B.-Y. Mao, P.‐H. Chang, Hon Wai Lam et al. · Applied Physics Letters · 1986 · 73 citations

Engineering, Materials Engineering, Materials Science +15