Back-channel Passivation

Back-Channel Passivation is a thin-film transistor fabrication technique that involves the application of a dielectric or protective layer to the back-channel surface of the semiconductor to suppress environmental degradation and reduce interfacial trap states, thereby enhancing device stability and electrical performance.

39

Publications

1.4K

Citations

212

Authors

65

Institutions

Publications per year

2017–2026

16

Publications

39

1–5 of 39

Authors

212

  1. PL
    Po‐Tsun Liu

    National Yang Ming Chiao Tung University, Taiwan

    4 publications · 168 citations

    4

    h-index

  2. CH
    Chi‐Sun Hwang

    Electronics and Telecommunications Research Institute, South Korea

    4 publications · 124 citations

    4

    h-index

  3. CC
    Chih-Hsiang Chang

    National Yang Ming Chiao Tung University, Taiwan

    2 publications · 83 citations

    2

    h-index

  4. KL
    Kwang‐Heum Lee

    Korea Advanced Institute of Science and Technology, South Korea

    2 publications · 34 citations

    2

    h-index

  5. TC
    Ting‐Chang Chang

    National Sun Yat-sen University, Taiwan

    2 publications · 103 citations

    2

    h-index

1–5 of 212

Venues

  1. Applied Physics Letters

    6 publications · 273 citations

    6

    h-index

  2. IEEE Electron Device Letters

    5 publications · 218 citations

    5

    h-index

  3. ACS Applied Materials & Interfaces

    3 publications · 176 citations

    3

    h-index

  4. Microelectronic Engineering

    3 publications · 59 citations

    3

    h-index

  5. IEEE Transactions on Electron Devices

    2 publications · 44 citations

    2

    h-index

1–5