Back-channel Passivation
Back-Channel Passivation is a thin-film transistor fabrication technique that involves the application of a dielectric or protective layer to the back-channel surface of the semiconductor to suppress environmental degradation and reduce interfacial trap states, thereby enhancing device stability and electrical performance.
39
Publications
1.4K
Citations
212
Authors
65
Institutions
Publications per year
2017–2026
16
Parents
39
Hao Luo, Lingyan Liang, Hongtao Cao et al. · ACS Applied Materials & Interfaces · 2015 · 100 citations
Sheng-Yao Huang, Ting‐Chang Chang, Min-Chen Chen et al. · Electrochemical and Solid-State Letters · 2011 · 76 citations
Seonghwan Hong, Sung Pyo Park, Yeong-gyu Kim et al. · Scientific Reports · 2017 · 71 citations · Full text
1–5 of 39
212
4
h-index
Electronics and Telecommunications Research Institute, South Korea
4 publications · 124 citations
4
h-index
2
h-index
Korea Advanced Institute of Science and Technology, South Korea
2 publications · 34 citations
2
h-index
2
h-index
1–5 of 212
65

National Yang Ming Chiao Tung University
Hsinchu, Taiwan
4 h-index
20 publications
829 citations
Electronics and Telecommunications Research Institute
Daejeon, South Korea
4 h-index
7 publications
230 citations
Kyung Hee University
Seoul, South Korea
3 h-index
8 publications
662 citations
Yonsei University
Seoul, South Korea
3 h-index
10 publications
506 citations

South China University of Technology
Guangzhou, China
2 h-index
15 publications
526 citations
Samsung (South Korea)
Seoul, South Korea
2 h-index
2 publications
107 citations

National Sun Yat-sen University
Kaohsiung City, Taiwan
2 h-index
11 publications
542 citations
Oregon State University
Corvallis, United States
2 h-index
6 publications
176 citations
1–8 of 65
6 publications · 273 citations
6
h-index
5 publications · 218 citations
5
h-index
3 publications · 176 citations
3
h-index
3 publications · 59 citations
3
h-index
2 publications · 44 citations
2
h-index
1–5