Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process - Concepedia

Concepedia

Publication | Open Access

Low-temperature fabrication of an HfO2 passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process

DOI Full Paper Access

67

Citations

33

References

2017

Year

Seonghwan Hong, Sung Pyo Park, Yeong-gyu Kim, Byung Ha Kang, Jae Won Na, Hyun Jae Kim

Scientific Reports

References

	Year	Citations

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