Electrochemical and Solid-State Letters · 2011 · 76 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesAluminum OxidesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film TransistorsBack-channel PassivationBias Stress EffectsOxide Thin-film TransistorsPassivationPassivation LayersSemiconducting Oxide MaterialsSemiconductor Oxide Thin FilmsWater Vapor Absorption
This study investigates the effects of ambient atmosphere on electrical characteristics of Al2O3 passivated InGaZnO thin film transistors during positive bias temperature stress. Under H2O vapor environment, the Al2O3 passivated device exhibited stable electrical behaviors (ΔVth < 0.5 V), while the unpassivated device showed an apparent hump effect in the transfer curves under bias stress. The hump phenomenon was attributed to the absorption of the H2O molecule which can serve as a donor to develop a conductive back channel. The experiment results suggest that Al2O3 is an effective passivation layer to suppress water vapor absorption in the InGaZnO back channel.
18
Interactions of tin oxide surface with O2, H2O AND H2
Noboru Yamazoe, Jun Fuchigami, Masato Kishikawa et al. · Surface Science · 1979 · 833 citations
Natural Sciences, Materials Engineering, Materials Science +14