S. Matteson - Concepedia

Author

S. Matteson

Texas Instruments (United States)

Also Known As

S Matteson, S. E. Matteson, S. Matteson, S.E. Matteson, Sam Matteson

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Texas Instruments (United States)University of North Texas California Institute of Technology Baylor University Max Planck Institute for Plasma Physics

About

S. Matteson is an author at Texas Instruments (United States) specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	17	20	1K
2	Engineering	16	22	1K
3	Natural Sciences	7	7	314
4	Medicine	5	5	68
5	Education	1	1	15

S. Matteson

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Trapping of deuterium implanted in carbon and silicon: A calibration for particle-energy measurements in the plasma boundary of tokamaks G. Staudenmaier, J. Roth, R. Behrisch, Journal of Nuclear Materials EngineeringPhysicsParticle-energy MeasurementsNatural SciencesApplied Physics	1979	171
Ion-induced silicide formation in niobium thin films S. Matteson, J. Rothi, M‐A. Nicolet Radiation Effects Materials ScienceIon ImplantationEngineeringPhysicsFilm Thickness	1979	123
Improvement of crystalline quality of epitaxial Si layers by ion-implantation techniques S.S. Lau, S. Matteson, J. W. Mayer, Applied Physics Letters Materials ScienceSemiconductorsCrystalline QualityIon ImplantationEngineering	1979	115
A simple method for taking natural-head-position cephalograms Kevin J. Showfety, Peter S. Vig, S. Matteson American Journal of Orthodontics Natural-head-position CephalogramsEngineeringEye TrackingBiomedical ImagingMedical Image Computing	1983	110
Ion Mixing S. Matteson, M.−A. Nicolet Annual Review of Materials Science	1983	106
Raman-scattering depth profile of the structure of ion-implanted GaAs M. Holtz, R. Zallen, O. Brafman, Physical review. B, Condensed matter Materials ScienceSemiconductorsIon ImplantationExtensive Raman-scattering InvestigationEngineering	1988	85
Ion beam mixing in amorphous silicon I. Experimental investigation S. Matteson, B.M. Paine, M. G. Grimaldi, Nuclear Instruments and Methods Ion BeamIon ImplantationApplied PhysicsIon Beam Mixing	1981	81
Ion beam mixing in amorphous silicon II. Theoretical interpretation S. Matteson, B.M. Paine, M.‐A. Nicolet Nuclear Instruments and Methods Ion ImplantationPhysicsApplied PhysicsIon Beam MixingIon Beam	1981	68
Morphological studies of oval defects in GaAs epitaxial layers grown by molecular beam epitaxy S. Matteson, H. D. Shih Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringGaas Epitaxial LayersEngineering	1986	53
Depth dependence of atomic mixing by ion beams B-Y. Tsaur, S. Matteson, Gemma Chapman, Applied Physics Letters Ion ImplantationThin PtEngineeringPhysicsAtomic Mixing	1979	52

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