physica status solidi (b) · 2016 · 65 citations · 20 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesX-ray Photoelectron SpectroscopyBand OffsetsConduction BandGate Oxide InterfacesGate OxidesSemiconductor CharacterizationSemiconductor HeterojunctionsValence BandValence Band Structure
We evaluated the band offsets at the SiO2/β-Ga2O3 (010) interface by X-ray photoelectron spectroscopy (XPS). Plasma chemical vapor deposition with a liquid tetraethyl orthosilicate source for SiO2 was used to prepare an SiO2(40 nm)/Ga2O3 sample and an SiO2(3 nm)/Ga2O3 sample for XPS analyses. The bandgap of SiO2 was determined to be 8.7 ± 0.2 eV. A large conduction band offset of 3.1 ± 0.2 eV and a corresponding valence band offset of 1.0 ± 0.2 eV were determined for the SiO2/Ga2O3 interface. These results suggest that an SiO2 gate insulator is favorable for Ga2O3 field effect transistors operating under high temperatures.
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E. A. Kraut, R. W. Grant, J. R. Waldrop et al. · Physical Review Letters · 1980 · 1.5K citations
Natural Sciences, Materials Engineering, Materials Science +17
Deep-ultraviolet transparent conductive β-Ga2O3 thin films
Masahiro Orita, Hiromichi Ohta, Masahiro Hirano et al. · Applied Physics Letters · 2000 · 996 citations
Natural Sciences, Materials Engineering, Materials Science +17
Masataka Higashiwaki, Kohei Sasaki, Takafumi Kamimura et al. · Applied Physics Letters · 2013 · 719 citations