Resistive Switching in $\hbox{TiO}_{2}$ Thin Films Using the Semiconducting In-Ga-Zn-O Electrode

Abstract

Resistance switching behaviors in a Pt/In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ZnO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sub> (IGZO)/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /Pt sample were examined for their potential use in diode-free memory integration. The In-Ga-Zn-O (IGZO) layer worked as the semiconductor layer, exhibiting accumulation or depletion of carriers depending on the polarity of the bias. Electroforming was possible only under the IGZO depletion condition due to the limited background leakage current flow. The repeated set/reset operation was also observed under the depletion condition. While the reset was possible, set was impeded by the high background current flow of the IGZO layer under the accumulation condition.