Jun Yeong Seok

Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta₂O₅/HfO_2‐x/TiN Structure

Jung Ho Yoon, Seul Ji Song, Il‐Hyuk Yoo et al. · Advanced Functional Materials · 2014 · 268 citations

Engineering, Emerging Memory Technology, Highly Uniform +16

A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO₂/Pt structure

Kyung Min Kim, Byung Joon Choi, Min Hwan Lee et al. · Nanotechnology · 2011 · 193 citations

Engineering, Detailed Understanding, Charge Transport +17

Highly Improved Uniformity in the Resistive Switching Parameters of TiO₂ Thin Films by Inserting Ru Nanodots

Jung Ho Yoon, Jeong Hwan Han, Ji Sim Jung et al. · Advanced Materials · 2013 · 181 citations

Non-volatile Memory, Engineering, Thin Film Process Technology +17

Pt/Ta₂O₅/HfO₂₋<i>_x</i>/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

Jung Ho Yoon, Kyung Min Kim, Seul Ji Song et al. · Advanced Materials · 2015 · 174 citations

Non-volatile Memory, Electrical Engineering, Multilevel Nand Flash +12

32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory

Gun Hwan Kim, Jong-Ho Lee, Youngbae Ahn et al. · Advanced Functional Materials · 2012 · 174 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18