Publication | Closed Access
Pt/Ta<sub>2</sub>O<sub>5</sub>/HfO<sub>2−</sub><i><sub>x</sub></i>/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
174
Citations
20
References
2015
Year
Non-volatile MemoryElectrical EngineeringMultilevel Nand FlashEngineeringNanoelectronicsElectronic MemoryFlash MemoryComputer EngineeringComputer ArchitectureFeasible CandidateMemory DeviceNew Circuit DesignInterconnection Wire ResistanceResistive Random-access MemoryMicroelectronics
Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as a feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, low power consumption, long-term reliability, and only an electronic switching mechanism, without an ionic-motion-related mechanism.
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