Plasma Sources Science and Technology · 2015 · 22 citations · 71 references
Natural SciencesChemistryPhysicsPhysical ChemistryPlasma PhysicsSpectroscopyHigh-temperature PlasmasPlasma FundamentalsPlasma SimulationPlasma-surface InteractionsStrongly Coupled PlasmasCapacitively Coupled PlasmasElectron AttachmentElectron Attachment ProcessesNumerical SimulationOptical Emission SpectraOptical Emission SpectroscopyPlasma ChemistryRadical Production Pathways
Radio frequency capacitively coupled plasma (RF CCP) sustained at RF frequencies of 27 MHz in an Ar–CF4–CF3I gas mixture is studied experimentally and theoretically. The RF CCP in Ar–CF4–CF3I is simulated by using a 1D hybrid particle-in-cell–fluid numerical model. We pay special attention to the changes in plasma structure and fluxes to the electrode, negative ion and neutral radical production with admixture of CF3I in Ar–CF4 plasma. With CF3I admixture the plasma becomes strongly electronegative as a result of the high electron attachment rate to the CF3I molecule. The atomic fluorine density becomes extremely low with addition of CF3I molecules due to the large volume loss in the reaction CF3I + F → CF3 + IF. Optical emission spectrometry data on CF2 emission at the wavelength of 250 nm indicate the essential sources of CF2 in CF3I-containing plasma in the studied conditions, although direct dissociation channels for the CF3I molecule with CF2 production have not been studied. Evaluation of CF2 density in Ar–CF4–CF3I plasma was first carried out on the basis of the actinometry technique and numerical simulation. The possible mechanism of ultra-low-k film damage in the studied conditions is also discussed.
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