Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan, Desmond R. Lim, Kevin C. Lee et al. · Applied Physics Letters · 1999 · 677 citations

Engineering, Materials Engineering, Materials Science +16

Strain-induced band gap shrinkage in Ge grown on Si substrate

Yasuhiko Ishikawa, Kazumi Wada, D.D. Cannon et al. · Applied Physics Letters · 2003 · 390 citations

Engineering, Materials Engineering, Materials Science +17

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Hiroshi Matsubara, Takashi Sasada, Mitsuru Takenaka et al. · Applied Physics Letters · 2008 · 318 citations

Engineering, Materials Engineering, Materials Science +17

Metal–semiconductor–metal near-infrared light detector based on epitaxial Ge/Si

Lorenzo Colace, G. Masini, Gaetano Assanto et al. · Applied Physics Letters · 1998 · 248 citations

Engineering, Electrical Engineering, Materials Science +17

Metal-Semiconductor-Metal Near Infrared Light Detector Based on Epitaxial Ge on Si

Lorenzo Colace, G. Masini, F. Galluzzi et al. · Conference on Lasers and Electro-Optics Europe · 1998 · 204 citations

Engineering, Materials Engineering, Materials Science +17