IEEE Transactions on Nuclear Science · 2010 · 22 citations · 12 references
EngineeringComputer EngineeringElectrical EngineeringFault-tolerant ComputingMicroelectronicsSemiconductor DevicesDefects In Electronic MaterialsDevice ReliabilityMemory DevicesRadiation Damage In MaterialsSemiconductor DefectsSemiconductor ReliabilityDisplacement Damage EffectsDynamic Random-access Memory DesignLeakageLeakage CurrentLeakage Current AnalysisLeakage Current ModelingRadiation Damage EffectsRadiation Effects On Reliability
A new method is presented and demonstrated to quantify the leakage currents in Intermittently Stuck Bits (ISB's) in SDRAM's, which have been exposed to neutron or proton irradiation. It is argued that these ISB's are caused by Single Particle Displacement Damage Effects (SPDDE's), in the form of displacement damage complexes comprising one or more damage clusters. The leakage current histories of ISB's are compared with a model of the behavior of the displacement damage complexes believed to cause the ISB's.
12
Ion-induced stuck bits in 1T/1C SDRAM cells
Larry D. Edmonds, S. M. Guertin, Leif Scheick et al. · IEEE Transactions on Nuclear Science · 2001 · 31 citations
Engineering, Computer Engineering, Electrical Engineering +10