IEEE Transactions on Nuclear Science · 1993 · 114 citations · 19 references
EngineeringElectrical EngineeringPhysicsCondensed Matter PhysicsMicroelectronicsRadiation PhysicsDefects In Electronic MaterialsNoise In Electronic DevicesNoise In Semiconductor DevicesProton DosimetryBistable MaterialsBistable MechanismsDark CurrentIrradiation DamageRadiation Damage In DetectorsRadiation DefectsRadiation-induced DefectsRandom Telegraph Noise
It has been shown that proton-induced defects in charge couple devices (CCDs) can demonstrate the classic phenomenology of random telegraph signals (RTSs). These fluctuations take the form of RTSs with well-defined amplitudes and time constants for the high and low dark current states. The time constants are strongly temperature-activated and the evidence suggests the presence of a bistable defect whose structural reconfigurations cause changes in the dark current. Though an important noise source for room-temperature systems, the RTS pulse width is increased on cooling and the effect is not likely to be important below approximately -20 degrees C. Annealing of the RTS defect was found to occur at approximately 100 degrees C.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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The physics of semiconductor devices
H. L. Grubin · IEEE Journal of Quantum Electronics · 1979 · 2.8K citations
Interstitial Defect Reactions in Silicon
Lionel C. Kimerling, M. T. Asom, J. L. Benton et al. · Materials science forum · 1989 · 188 citations · Full text
Interstitial defect reactions in silicon
M. T. Asom, J. L. Benton, R. Sauer et al. · Applied Physics Letters · 1987 · 146 citations