Displacement Damage Effects

Displacement Damage Effects is a radiation-induced degradation phenomenon in semiconductor materials characterized by the permanent lattice displacement of atoms due to energetic particle bombardment, distinguishing it from transient ionization effects by causing cumulative, non-recoverable changes in device performance.

355

Publications

15.5K

Citations

1.3K

Authors

355

Institutions

Publications per year

2017–2026

71

Variants

Displacement Damage

Authors

1.3K

  1. GS
    G.P. Summers

    United States Naval Research Laboratory, United States

    21 publications · 1.5K citations

    17

    h-index

  2. AJ
    A.H. Johnston

    Jet Propulsion Laboratory, United States

    15 publications · 633 citations

    15

    h-index

  3. EB
    E.A. Burke

    United States Naval Research Laboratory, United States

    16 publications · 1.4K citations

    15

    h-index

  4. PW
    Paul W. Marshall

    Goddard Space Flight Center, United States

    18 publications · 1.7K citations

    14

    h-index

  5. CD
    C.J. Dale

    United States Naval Research Laboratory, United States

    14 publications · 940 citations

    12

    h-index

1–5 of 1.3K

Venues

  1. IEEE Transactions on Nuclear Science

    138 publications · 7K citations

    46

    h-index

  2. Journal of Nuclear Materials

    19 publications · 837 citations

    16

    h-index

  3. Journal of Applied Physics

    17 publications · 344 citations

    13

    h-index

  4. Applied Physics Letters

    12 publications · 598 citations

    11

    h-index

  5. 8

    h-index

1–5