IEEE Electron Device Letters · 1986 · 13 citations · 6 references
Natural SciencesElectrical EngineeringPhysicsElectronic MaterialsMicroelectronicsSemiconductor DevicesHigh-temperature PlasmasLow-temperature PlasmasMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSurface OxidationThin Film OxidationLow-temperature FabricationMicrowave PlasmasOxidation Defect FormationOxidation MechanismsPlasma OxidationPlasma-assisted OxidationPlasma-enhanced OxidationSemiconductor Oxidation
A microwave-excited plasma oxidation technique is applied to gate oxide formation of MOSFET's and subsequent processes are carried out essentially at temperatures below 600°C. These MOSFET's compare favorably with conventional ones fabricated by using a high-temperature processes in terms of field-effect mobility and subthreshold characteristics.
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