An improvement of the interface properties of plasma anodized SiO₂/Si system for the fabrication of MOSFET's

Abstract

A new annealing process in chlorine ambient produced by passing argon through a CCl <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> container for reducing the interface states of the plasma anodized SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> /Si system was developed. At optimum annealing conditions, the interface state density was reduced to about 10 <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</inf> states/eV . cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Application of the oxide to the fabrication of MOSFET's shows that the devices obtained have lower threshold voltage and higher mobility than those fabricated with thermal oxidation in dry oxygen.